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| SMD Type High Voltage Transistor PZTA96S SOT-223 6.50 +0.2 -0.2 Transistors Unit: mm +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 Features PNP Silicon +0.1 3.00-0.1 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 Base 1 2 2.9 4.6 3 +0.1 0.70-0.1 2 Collector 3 Emitter 4 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Up to TA = 25 Storage Temperature Range Junction Temperature Thermal Resistance from Junction to Ambient * * Symbol VCEO VCBO VEBO IC PD Tstg TJ ReJA Rating -450 -450 -5 -500 1.5 -65 to +150 150 83.3 Unit V V V mA Watts * Device mounted on a glass epoxy printed circuit board 1.575 in. X 1.575 in.X 0.059 in.; Electrical Characteristics Ta = 25 Parameter Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current DC Current Gain* Saturation Voltages * Pulse Test: Pulse Width Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) 300 is; Duty Cycle = 2.0%. Testconditons IC = -1.0 mA, IB = 0 IC = -100 iA,IE = 0 IE = -10iA, IC = 0 VCB = -400 V, IE = 0 VBE = -4.0 V, IC = 0 IC = -10 mA, VCE =-10 V IC = -20 mA, IB =-2.0 mA IC = -20 mA, IB = -2.0 mA 50 Min -450 -450 -5.0 -0.1 -0.1 150 -0.6 -1.0 V V Typ Max Unit V V V iA iA Marking Marking ZTA96 +0.15 1.65-0.15 www.kexin.com.cn 1 |
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